summaryrefslogtreecommitdiff
path: root/Documentation
diff options
context:
space:
mode:
Diffstat (limited to 'Documentation')
-rw-r--r--Documentation/DocBook/mtdnand.tmpl19
-rw-r--r--Documentation/devicetree/bindings/mtd/atmel-dataflash.txt14
2 files changed, 15 insertions, 18 deletions
diff --git a/Documentation/DocBook/mtdnand.tmpl b/Documentation/DocBook/mtdnand.tmpl
index 17910e2052a..0c674be0d3c 100644
--- a/Documentation/DocBook/mtdnand.tmpl
+++ b/Documentation/DocBook/mtdnand.tmpl
@@ -572,7 +572,7 @@ static void board_select_chip (struct mtd_info *mtd, int chip)
</para>
<para>
The simplest way to activate the FLASH based bad block table support
- is to set the option NAND_USE_FLASH_BBT in the option field of
+ is to set the option NAND_BBT_USE_FLASH in the bbt_option field of
the nand chip structure before calling nand_scan(). For AG-AND
chips is this done by default.
This activates the default FLASH based bad block table functionality
@@ -773,20 +773,6 @@ struct nand_oobinfo {
done according to the default builtin scheme.
</para>
</sect2>
- <sect2 id="User_space_placement_selection">
- <title>User space placement selection</title>
- <para>
- All non ecc functions like mtd->read and mtd->write use an internal
- structure, which can be set by an ioctl. This structure is preset
- to the autoplacement default.
- <programlisting>
- ioctl (fd, MEMSETOOBSEL, oobsel);
- </programlisting>
- oobsel is a pointer to a user supplied structure of type
- nand_oobconfig. The contents of this structure must match the
- criteria of the filesystem, which will be used. See an example in utils/nandwrite.c.
- </para>
- </sect2>
</sect1>
<sect1 id="Spare_area_autoplacement_default">
<title>Spare area autoplacement default schemes</title>
@@ -1158,9 +1144,6 @@ in this page</entry>
These constants are defined in nand.h. They are ored together to describe
the functionality.
<programlisting>
-/* Use a flash based bad block table. This option is parsed by the
- * default bad block table function (nand_default_bbt). */
-#define NAND_USE_FLASH_BBT 0x00010000
/* The hw ecc generator provides a syndrome instead a ecc value on read
* This can only work if we have the ecc bytes directly behind the
* data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */
diff --git a/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt b/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt
new file mode 100644
index 00000000000..ef66ddd01da
--- /dev/null
+++ b/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt
@@ -0,0 +1,14 @@
+* Atmel Data Flash
+
+Required properties:
+- compatible : "atmel,<model>", "atmel,<series>", "atmel,dataflash".
+
+Example:
+
+flash@1 {
+ #address-cells = <1>;
+ #size-cells = <1>;
+ compatible = "atmel,at45db321d", "atmel,at45", "atmel,dataflash";
+ spi-max-frequency = <25000000>;
+ reg = <1>;
+};